surface mount schottky power rectifier

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI®123 Product Summary VR(V) IF (A) VF MAX (V) @ +25°C IR MAX (mA) 30 1.5 0.36 1.0 Description and Applications This Schottky Barrier Rectifier has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as:Polarity Protection Diode MBR0520LT1 - Surface Mount Schottky Power RectifierSurface Mount Schottky Power Rectifier Plastic SOD123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage dropreverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection

MBR130LSFT1G Surface Mount Schottky Power Rectifier

Jun 22, 2018 · Surface Mount Schottky Power Rectifier Plastic SOD123 Package This device uses the Schottky Barrier principle with a large area metaltosilicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight MBRA130LT3 - Surface Mount Schottky Power RectifierMBRA130LT3 - Surface Mount Schottky Power Rectifier Author:ffyvgq Subject:This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheel ing diodes and MBRA340, NRVBA340, SBRA340T3G Surface Mount Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metaltosilicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

MBRM110L - Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage dropreverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, MBRS340T3G in Reel by ON Semiconductor Schottky The MBRS340T3G is a 80 A 40 V surface mount schottky power rectifier, employs the schottky barrier principle in a large area metal-to-silicon power diode. MBRS360T3G, NRVBS360T3G, Surface Mount Schottky Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

MBRS410LT3 - Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or Surface Mount Rectifier manufacturers, China Surface Mount Import quality Surface Mount Rectifier supplied by experienced manufacturers at Global Sources. We use cookies to give you the best possible experience on our website. For more details including how to change your cookie settings, please read our Cookie Policy . Surface Mount Rectifiers manufacturers, China Surface Find Surface Mount Rectifiers manufacturers from China. Import quality Surface Mount Rectifiers supplied by experienced manufacturers at Global Sources. Surface Mount Schottky Barrier Rectifier with Built-in Strain Relief and High Surge Capacity US$ 1 / Piece; 4000 Pieces (Min. Order) SMD power jacks (2) Rework stations (5) PCB

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SS22T3G, SS24T3G, NRVBSS24T3G, NRVBSS24NT3G These devices employ the Schottky Barrier principle in a metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for lowMBRS3200T3 - Surface Mount Schottky Power RectifierSurface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or